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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3812
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3812-ZP PACKAGE TO-263 (MP-25ZP)
FEATURES
* Super low on-state resistance RDS(on)1 = 2.8 m MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 m MAX. (VGS = 4.5 V, ID = 55 A) * High current rating: ID(DC) = 110 A
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
(TO-263) 60 20 110 440 213 1.5 150 -55 to +150 397 63 397 V V A A W W C C mJ A mJ
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Energy
Note2 Note3 Note3
EAS IAR EAR
Repetitive Avalanche Current Repetitive Avalanche Energy
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 H 3. Tch(peak) 150C, RG = 25
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D16738EJ1V0DS00 (1st edition) Date Published September 2004 NS CP(K) Printed in Japan
2004
2SK3812
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 55 A VGS = 10 V, ID = 55 A VGS = 4.5 V, ID = 55 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V, ID = 55 A VGS = 10 V RG = 0
MIN.
TYP.
MAX. 10 100
UNIT
A
nA V S
1.5 50
2.0 110 2.3 2.6 16800 1600 1000 42 160 140 15
2.5
Drain to Source On-state Resistance
2.8 3.7
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 48 V VGS = 10 V ID = 110 A IF = 110 A, VGS = 0 V IF = 110 A, VGS = 0 V di/dt = 100 A/s
250 41 66 0.87 53 74 1.5
V ns nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D16738EJ1V0DS
2SK3812
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000
RDS(on) Limited (at VGS = 10 V) ID(DC) Power Dissipation Limited ID(pulse) PW =100 s
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 250 PT - Total Power Dissipation - W 200 150 100 50 0 0 25 50 75 100 125 150 175 TC - Case Temperature - C
ID - Drain Current - A
100
1 ms
10
10 ms
1
TC = 25C Single pulse
0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W 1000 Rth(ch-A) = 83.3C/W 100 10 1 Rth(ch-C) = 0.587C/W 0.1 0.01 Single pulse 0.001 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D16738EJ1V0DS
3
2SK3812
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 500 Pulsed 400 ID - Drain Current - A 300 200 100 0 0 0.4 0.8 1.2 1.6 VDS - Drain to Source Voltage - V VGS = 10 V ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000 100 10 1 0.1 0.01 0.001 1 2 3 4 5 TA = 150C 75C 25C -55C VDS = 10 V Pulsed
4.5 V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S 3.0 VGS(off) - Gate Cut-off Voltage - V 2.5 2.0 1.5 1.0 0.5 0 -75 -25 25 75 125 175 Tch - Channel Temperature - C VDS = 10 V ID = 1 mA 1000
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed 100 TA = 150C 75C 25C -55C
10
1 0.1 1 10 100 1000 ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
6 Pulsed 5 4 3 2 1 0 1 10 100 1000 ID - Drain Current - A VGS = 4.5 V 10 V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 6 Pulsed 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V ID = 110 A 55 A 22 A
4
Data Sheet D16738EJ1V0DS
2SK3812
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 6 5 4 3 10 V 2 1 0 -75 -25 25 75 125 175 Tch - Channel Temperature - C VGS = 4.5 V Ciss, Coss, Crss - Capacitance - pF Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000
VGS = 0 V f = 1 MHz Ciss
10000
1000
Coss
Crss 100 0.1 1 10 100 VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS 1000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns tr td(off) td(on) tf VDD = 30 V VGS = 10 V RG = 0 1 0.1 1 10 100 1000 ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 ID = 110 A 50 40 30 20 10 0 0 50 100 150 200 250 VDS VGS VDD = 48 V 30 V 12 V 10 8 6 4 2 0 300 12
100
10
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
1000
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
di/dt = 100 A/s VGS = 0 V 100
100
4.5 V 0V
10
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
VGS = 10 V
10
1 Pulsed 0.1 0 0.5 1 1.5
1 0.1 1 10 100 1000
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D16738EJ1V0DS
5
VGS - Gate to Source Voltage - V
2SK3812
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
100 VDD = 30 V RG = 25 VGS = 20 0 V IAS 63 A
1000
IAS - Single Avalanche Current - A Energy Derating Factor - %
80 60 40 20 0
100
IAS = 63 A EAS = 397 mJ
10
VDD = 30 V RG = 25 VGS = 20 0 V Starting Tch = 25C 0.01 0.1 1 10
1 0.001
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D16738EJ1V0DS
2SK3812
PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
10.00.3 No plating 7.88 MIN. 4
1.350.3
4.450.2 1.30.2
8.0 TYP.
9.150.3
15.250.5
0.025 to 0.25
0.5
0.6
0.750.2 2.54
0.2 8o
0 to
0.25
1
2
3
1. Gate 2. Drain 3. Source
2.5
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
2.540.25
Data Sheet D16738EJ1V0DS
7
2SK3812
* The information in this document is current as of September, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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